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Microstructure variation effects on room temperature fatigue crack propagation and thresholds in Udimet 720Li Ni-base alloy

机译:Udimet 720Li镍基合金微观组织变化对室温疲劳裂纹扩展及阈值的影响

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摘要

An assessment of the effects of microstructure on room temperature fatigue threshold and crack propagation behaviour has been carried out on microstructural variants of U720Li, i.e. as-received U720Li, U720Li-LG (large grain variant) and U720Li-LP (large intragranular coherent ?' variant). Fatigue tests were carried out at room temperature using a 20Hz sinusoidal cycling waveform at an R-ratio=0.1. U720Li-LG showed the highest threshold ?K (?Kth), whilst U720Li-LP showed the lowest ?Kth value. U720Li-LP also showed higher crack growth rates in the near-threshold regime and at high ?K (although at higher ?K levels the difference was less marked). Crack growth rates of U720Li and U720Li-LG were relatively similar both in the near-threshold and high ?K regime. The materials showed crystallographic stage I type crack growth in the near-threshold regime, with U720Li showing distinct crystallographic facets on the fracture surface while U720Li-LG and U720Li-LP showed mostly microfacets and a lower proportion of large facets. At high ?K, crack growth in the materials becomes flat and featureless indicative of stage II type crack growth. The observed performance of the materials is rationalised in terms of their microstructural characteristics. Enhanced room temperature fatigue threshold and long crack growth resistance are seen for larger grained materials due to increased extrinsic crack growth resistance contributions from crack closure. Differences in heterogeneity of deformation behaviour in this set of material variants appear to give approximately equivalent intrinsic crack growth resistance at room temperature due to the respective effects of each deformation behaviour on intrinsic crack growth resistance.
机译:已经对U720Li的微结构变体,即按原样接收的U720Li,U720Li-LG(大晶粒变体)和U720Li-LP(大晶粒内相干?')进行了微观结构对室温疲劳阈值和裂纹扩展行为的影响评估。变体)。疲劳测试是在室温下使用20Hz正弦循环波形在R比率= 0.1时进行的。 U720Li-LG的阈值ΔK(ΔKth)最高,而U720Li-LP的阈值ΔKth最低。 U720Li-LP在接近阈值的状态和较高的?K下也显示出较高的裂纹扩展速率(尽管在较高的?K水平下差异并不明显)。 U720Li和U720Li-LG的裂纹增长率在近阈值和高KK体制下都相对相似。这些材料在接近阈值状态下表现出I型晶体裂纹扩展,U720Li在断口表面显示出明显的晶面,而U720Li-LG和U720Li-LP则大部分表现为微晶面,而较小的大晶面比例较低。在高ΔK时,材料中的裂纹扩展变得平坦并且无特征地指示II型裂纹扩展。在材料的微观结构特征方面,观察到的性能是合理的。较大晶粒材料的室温疲劳阈值提高,抗裂纹扩展性增强,这归因于裂纹闭合带来的非本征裂纹扩展性贡献。由于每种变形行为对固有裂纹扩展抵抗力的相应影响,在这组材料变体中,变形行为的异质性差异似乎在室温下具有近似相等的固有裂纹扩展抵抗力。

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    Pang, H.T.; Reed, P.A.S.;

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  • 年度 2009
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  • 正文语种 {"code":"en","name":"English","id":9}
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